FM2G75US60 Fairchild Semiconductor, FM2G75US60 Datasheet - Page 3

• Manufacturer Part Number: FM2G75US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FM2G75US60

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 75 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Electrical Characteristics of DIODE
Thermal Characteristics
V
t
I
Q
R
R
R
Weight
rr
rr
Symbol
FM
rr
Symbol
JC
JC
CS
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Case-to-Sink
Weight of Module
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Parameter
(Conductive grease applied)
Parameter
I
di / dt = 150 A/us
I
F
F
= 75A
= 75A
T
C
= 25 C unless otherwise noted
Test Conditions
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
Typ.
0.05
--
--
--
Min.
--
--
--
--
--
--
--
--
Max.
190
0.4
0.9
Typ.
--
130
315
650
1.9
1.8
90
10
7
Max.
130
590
2.8
--
--
--
--
9
FM2G75US60 Rev. A
Units
C/W
C/W
C/W
g
Units
nC
ns
V
A