SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 4

• Manufacturer Part Number: SGB07N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 8A
• Manufacturer: Infineon Technologies

Specifications of SGB07N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB07N120XT

Power Semiconductors
35A
30A
25A
20A
15A
10A
150W
125W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
5A
0A
75W
50W
25W
GE
j
j
10Hz
0W
= +15V/0V, R
25°C
150 C, D = 0.5, V
150 C)
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
I
,
c
CASE TEMPERATURE
T
G
C
=110°C
= 47 )
T
75°C
1kHz
C
=80°C
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
20A
15A
10A
1A
5A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
10V
C
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
SGB07N120
-
EMITTER VOLTAGE
100V
j
100°C
150 C)
Rev. 2_2
1000V
125°C
1ms
50 s
DC
t
15 s
200 s
p
=5 s
Apr 07