SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 5

• Manufacturer Part Number: SGB07N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 8A
• Manufacturer: Infineon Technologies

Specifications of SGB07N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB07N120XT

Power Semiconductors
25A
20A
15A
10A
25A
20A
15A
10A
Figure 7. Typical transfer characteristics
(V
5A
0A
5A
0A
Figure 5. Typical output characteristics
(T
CE
3V
0V
j
= 25 C)
= 20V)
V
T
J
CE
=-40°C
V
1V
V
T
,
GE
J
GE
COLLECTOR
=+25°C
=17V
T
,
J
5V
15V
13V
11V
9V
7V
=+150°C
GATE
2V
-
EMITTER VOLTAGE
3V
-
EMITTER VOLTAGE
7V
4V
5V
9V
6V
11V
7V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
25A
20A
15A
10A
Figure 6. Typical output characteristics
(T
5A
0A
GE
6V
5V
4V
3V
2V
1V
0V
0V
j
-50°C
= 150 C)
= 15V)
V
CE
1V
,
V
T
COLLECTOR
GE
j
,
=17V
JUNCTION TEMPERATURE
0°C
15V
13V
11V
9V
7V
2V
3V
SGB07N120
50°C
-
EMITTER VOLTAGE
4V
100°C
Rev. 2_2
5V
I
I
6V
150°C
I
C
C
C
=8A
=4A
=16A
Apr 07
7V