SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 7
SGB07N120
Manufacturer Part Number
SGB07N120
Description
IGBT Transistors FAST IGBT NPT TECH 1200V 8A
Manufacturer
Infineon Technologies
Datasheet
1.SGB07N120.pdf
(11 pages)
Specifications of SGB07N120
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-263-3
Continuous Collector Current Ic Max
16.5 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-263
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
16.5 A
Ic(max) @ 100°
7.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGB07N120XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SGB07N120
Manufacturer:
AD
Quantity:
2 300
Power Semiconductors
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
CE
GE
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
-50°C
= 800V, V
= +15V/0V, I
0A
*) E
due to diode recovery.
*) E
due to diode recovery.
T
j
I
,
on
on
C
JUNCTION TEMPERATURE
,
and E
and E
0°C
5A
COLLECTOR CURRENT
GE
C
= +15V/0V, R
j
CE
ts
ts
= 150 C,
= 8A, R
include losses
include losses
= 800V,
10A
50°C
G
= 47 ,
15A
100°C
G
= 4 7 ,
20A
150°C
E
E
E
E
on
E
ts
E
on
*
*
ts
off
off
*
*
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
10
10
10
10
CE
-1
-2
-3
0
K/W
K/W
K/W
K/W
= 800V, V
0
p
1µs
/ T)
0.05
0.2
0.1
D=0.5
0.02
0.01
*) E
due to diode recovery.
on
20
10µs
and E
R
single pulse
GE
G
t
p
,
= +15V/0V, I
,
j
GATE RESISTOR
100µs
ts
= 150 C,
PULSE WIDTH
40
include losses
SGB07N120
R
0.1020
0.40493
0.26391
0.22904
60
R , ( K / W )
1ms
1
C
1
=
C
1
Rev. 2_2
/ R
= 8A,
80
10ms 100ms
1
C
0.77957
0.21098
0.01247
0.00092
2
=
100
, ( s )
2
/R
E
E
E
off
R
2
on
ts
*
*
2
Apr 07
1s