SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 7

• Manufacturer Part Number: SGB07N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 8A
• Manufacturer: Infineon Technologies

Specifications of SGB07N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB07N120XT

Power Semiconductors
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
CE
GE
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
-50°C
= 800V, V
= +15V/0V, I
0A
*) E
due to diode recovery.
*) E
due to diode recovery.
T
j
I
,
on
on
C
JUNCTION TEMPERATURE
,
and E
and E
0°C
5A
COLLECTOR CURRENT
GE
C
= +15V/0V, R
j
CE
ts
ts
= 150 C,
= 8A, R
include losses
include losses
= 800V,
10A
50°C
G
= 47 ,
15A
100°C
G
= 4 7 ,
20A
150°C
E
E
E
E
on
E
ts
E
on
*
*
ts
off
off
*
*
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
10
10
10
10
CE
-1
-2
-3
0
K/W
K/W
K/W
K/W
= 800V, V
0
p
1µs
/ T)
0.05
0.2
0.1
D=0.5
0.02
0.01
*) E
due to diode recovery.
on
20
10µs
and E
R
single pulse
GE
G
t
p
,
= +15V/0V, I
,
j
GATE RESISTOR
100µs
ts
= 150 C,
PULSE WIDTH
40
include losses
SGB07N120
R
0.1020
0.40493
0.26391
0.22904
60
R , ( K / W )
1ms
1
C
1
=
C
1
Rev. 2_2
/ R
= 8A,
80
10ms 100ms
1
C
0.77957
0.21098
0.01247
0.00092
2
=
100
, ( s )
2
/R
E
E
E
off
R
2
on
ts
*
*
2
Apr 07
1s