SGB07N120 Infineon Technologies, SGB07N120 Datasheet - Page 8
SGB07N120
Manufacturer Part Number
SGB07N120
Description
IGBT Transistors FAST IGBT NPT TECH 1200V 8A
Manufacturer
Infineon Technologies
Datasheet
1.SGB07N120.pdf
(11 pages)
Specifications of SGB07N120
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-263-3
Continuous Collector Current Ic Max
16.5 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-263
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
16.5 A
Ic(max) @ 100°
7.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGB07N120XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SGB07N120
Manufacturer:
AD
Quantity:
2 300
Power Semiconductors
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
30 s
25 s
20 s
15 s
10 s
20V
15V
10V
5 s
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
C
= 1200V, start at T
0nC
= 8A)
V
GE
11V
,
Q
GATE
20nC
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
40nC
j
= 25 C)
13V
60nC
U
CE
14V
=960V
80nC
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V
100pF
150A
100A
50A
1nF
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
V
0V
V
= 0V, f = 1MHz)
CE
CE
V
,
GE
COLLECTOR
12V
,
1200V, T
GATE
10V
-
14V
EMITTER VOLTAGE
SGB07N120
-
C
EMITTER VOLTAGE
= 25 C, T
16V
20V
Rev. 2_2
j
18V
150 C)
30V
C
C
C
Apr 07
oss
rss
20V
iss