IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet - Page 12
IKP01N120H2
Manufacturer Part Number
IKP01N120H2
Description
IGBT 1200V 3.2A 28W TO220-3
Manufacturer
Infineon Technologies
Datasheet
1.IKP01N120H2.pdf
(14 pages)
Specifications of IKP01N120H2
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 1A
Current - Collector (ic) (max)
3.2A
Power - Max
28W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
3.2A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
28W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
28W
Rohs Compliant
Yes
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-220
Vce (max)
1,200.0 V
Ic(max) @ 25°
3.2 A
Ic(max) @ 100°
1.3 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKP01N120H2
Manufacturer:
INFINEON
Quantity:
12 500
IKP01N120H2
PG-TO220-3-1
Power Semiconductors
12
Rev. 2.4
Sept. 07