IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet - Page 6

• Manufacturer Part Number: IKP01N120H2
• Description: IGBT 1200V 3.2A 28W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKP01N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3.2A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 28W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure 7. Typical transfer characteristics
(V
Figure 5. Typical output characteristics
(T
5A
4A
3A
2A
1A
0A
5A
4A
3A
2A
1A
0A
CE
3V
0V
j
= 25 C)
= 20V)
V
CE
V
V
,
GE
GE
COLLECTOR
1V
=15V
T
,
12V
10V
j
=+25°C
8V
6V
GATE
5V
T
j
=+150°C
2V
-
EMITTER VOLTAGE
-
EMITTER VOLTAGE
7V
3V
4V
9V
5V
6
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
Figure 6. Typical output characteristics
(T
5A
4A
3A
2A
1A
0A
GE
4V
3V
2V
1V
0V
0V
-50°C
j
= 150 C)
= 15V)
V
CE
V
GE
,
T
1V
COLLECTOR
=15V
j
,
12V
10V
JUNCTION TEMPERATURE
8V
6V
0°C
2V
50°C
-
3V
EMITTER VOLTAGE
IKP01N120H2
4V
100°C
Rev. 2.4
5V
I
I
C
C
I
C
150°C
=0.5A
=2A
=1A
Sept. 07
6V