IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet - Page 7

• Manufacturer Part Number: IKP01N120H2
• Description: IGBT 1200V 3.2A 28W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKP01N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3.2A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 28W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E)
CE
GE
1000ns
100ns
100ns
10ns
10ns
= 800V, V
= +15V/0V, I
0°C
0A
T
j
I
,
C
JUNCTION TEMPERATURE
,
t
t
d(off)
t
COLLECTOR CURRENT
GE
d(on)
t
f
r
50°C
C
= +15V/0V, R
j
CE
= 150 C,
= 1A, R
1A
= 800V,
t
t
d(off)
f
t
d(on)
G
100°C
= 241 ,
t
r
G
2A
= 241 ,
150°C
7
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
C
CE
100ns
6V
5V
4V
3V
2V
1V
0V
10ns
= 0.03mA)
-50°C
1ns
= 800V, V
50
T
t
j
f
,
t
JUNCTION TEMPERATURE
t
0°C
d(off)
d(on)
t
R
r
GE
100
G
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
50°C
IKP01N120H2
150
C
100°C
Rev. 2.4
= 1A,
200
max.
min.
150°C
typ.
Sept. 07