IKP01N120H2 Infineon Technologies, IKP01N120H2 Datasheet - Page 5

• Manufacturer Part Number: IKP01N120H2
• Description: IGBT 1200V 3.2A 28W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKP01N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3.2A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 28W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
GE
5A
4A
3A
2A
1A
0A
30W
25W
20W
15W
10W
j
j
5W
0W
10Hz
= +15V/0V, R
150 C, D = 0.5, V
25°C
150 C)
f,
100Hz
T
50°C
SWITCHING FREQUENCY
C
T
I
T
,
C
c
C
CASE TEMPERATURE
=110°C
=80°C
G
75°C
= 241 )
1kHz
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
150°C
5
0,1A
,01A
Figure 4. Collector current as a function of
case temperature
(V
10A
1A
4A
3A
2A
1A
0A
GE
1V
25°C
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
50°C
T
C
10V
j
,
C
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
-
100V
EMITTER VOLTAGE
IKP01N120H2
100°C
j
150 C)
Rev. 2.4
125°C
1000V
t
p
=1 s
20 s
50 s
DC
200 s
5 s
2 s
150°C
Sept. 07