IGB50N60T Infineon Technologies, IGB50N60T Datasheet
IGB50N60T
Specifications of IGB50N60T
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IGB50N60T Summary of contents
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... CE(sat) 1 for target applications http://www.infineon.com/igbt Marking CE(sat),Tj=25°C j,max 1.5 V G50T60 175 C Symbol V I jmax I jmax - 600V, T 175 IGB50N60T Series G PG-TO-263-3-2 Package PG-TO-263-3-2 Value 600 100 50 150 150 333 -40...+175 j -55...+175 260 Rev. 2.5 04.03.2009 Unit ...
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... 175 = =20V =25V f=1MHz =15V =15V 400 IGB50N60T ® Series Max. Value 0.45 40 Value min. Typ. max. 600 - =50A C - 1.5 - 1.9 =V 4.1 4 1000 =20V - - =50A - 3140 - 200 - 93 =50A - 310 458 Rev. 2.5 04.03.2009 p Unit K/W Unit - V 2.0 - 5.7 µA 40 100 Ω ...
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... Energy losses include E “tail” and diode reverse recovery =150 C j Symbol Conditions 175 =50A 03nH =39pF Energy losses include E “tail” and diode reverse recovery IGB50N60T p Value Unit min. Typ. max 299 - - 1 1 2.6 - Value Unit min. Typ. max 341 - - 1.8 - ...
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... Figure 2. Safe operating area ( 400V, CE 80A 60A 40A 20A 0A 25°C Figure 4. Collector current as a function of case temperature (V 4 IGB50N60T t =2µs p 10µs 50µs 1ms DC 10ms 10V 100V 1000V - COLLECTOR EMITTER VOLTAGE = 175 =15V) GE 75°C 125°C ...
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... Figure 6. Typical output characteristic (T = 175°C) j 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 50° JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGB50N60T EMITTER VOLTAGE I =100A C I =50A C I =25A C 100°C 150°C Rev. 2.5 04.03.2009 ...
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... Dynamic test circuit in Figure d(off in d(on -50° Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C =7Ω IGB50N60T t d(on GATE RESISTOR G = 175° 400V 0/15V 50A ax. typ. 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE = 0.8mA) Rev. 2.5 04.03.2009 p ...
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... E on due to diode recovery 300V 350V V , COLLECTOR CE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load 7Ω Dynamic test circuit in Figure E) 7 IGB50N60T lud GATE RESISTOR G = 175° 400V 0/15V 50A and E include losses off 400V 450V 500V ...
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... V GE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (V T Jmax 8 IGB50N60T 10V 20V 30V 40V - COLLECTOR EMITTER VOLTAGE =0V MHz) GE 11V 12V 13V 14V , - GATE EMITETR VOLTAGE =600V, start at T =25° ...
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... D=0.5 0 K/W 0 0.18355 0.05 0.12996 0.09205 0.03736 0.00703 R 0. K/W 0. single pulse 1µs 10µs 100µs 1ms t , PULSE WIDTH P Figure 21. IGBT transient thermal resistance ( ® TrenchStop Series , ( 7.425*10 -3 8.34*10 -4 7.235*10 -4 1.035*10 -5 4.45* 10ms 100ms 9 IGB50N60T p Rev. 2.5 04.03.2009 ...
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... TrenchStop Series PG-TO263-3-2 10 IGB50N60T p Rev. 2.5 04.03.2009 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 11 IGB50N60T Rev. 2.5 04.03.2009 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. ® TrenchStop Series 12 IGB50N60T p Rev. 2.5 04.03.2009 ...