IGB50N60T Infineon Technologies, IGB50N60T Datasheet - Page 2

• Manufacturer Part Number: IGB50N60T
• Description: IGBT 600V 100A 333W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB50N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Power - Max: 333W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 333W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 50.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
j
= 25 C, unless otherwise specified
Symbol
R
R
V
V
V
I
I
g
R
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
G i n t
i s s
o s s
r s s
G a t e
2
TrenchStop
V
V
T
T
I
V
V
T
T
V
V
V
V
f=1MHz
V
V
V
V
T
C
j
j
j
j
j
G E
G E
C E
G E
C E
C E
C E
G E
C C
G E
G E
C C
= 25 C
= 175 C
=0.8mA,V
= 25 C
= 175 C
= 60 0 V
=0V ,V
=20V, I
=25V,
=0 V , I
=0 V
=0 V ,
= 48 0 V, I
=15V
=15V,t
= 400 V,
15 0 C
= 15 V, I
Conditions
Conditions
6cm² Cu
G E
C
,
S C
=0.2mA
C
®
C E
=20V
=50A
C
C
Series
=50A
=50A
5 s
=V
G E
min.
600
4.1
-
-
-
-
-
-
-
-
-
-
-
-
Max. Value
IGB50N60T
Value
458.3
3140
Typ.
0.45
200
310
1.5
1.9
4.9
Rev. 2.5 04.03.2009
40
31
93
7
-
-
-
-
-
max.
1000
100
2.0
5.7
40
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
nA
S
Ω
pF
nC
nH
A
p