IGB50N60T Infineon Technologies, IGB50N60T Datasheet - Page 8

• Manufacturer Part Number: IGB50N60T
• Description: IGBT 600V 100A 333W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB50N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Power - Max: 333W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 333W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 50.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 17. Typical gate charge
Figure 19. Typical short circuit collector
800A
700A
600A
500A
400A
300A
200A
100A
15V
10V
5V
0V
0A
0nC
12V
V
(I
current as a function of gate-
emitter voltage
(V
GE
C
CE
=50 A)
,
100nC
GATE
Q
14V
GE
400V, T
,
-
GATE CHARGE
EMITTETR VOLTAGE
120V
200nC
j
16V
150 C)
480V
300nC
18V
8
TrenchStop
Figure 18. Typical capacitance as a function
Figure 20. Short circuit withstand time as a
12µs
10µs
100pF
8µs
6µs
4µs
2µs
0µs
1nF
10V
®
0V
V
Series
CE
V
of collector-emitter voltage
(V
function of gate-emitter voltage
(V
T
,
GE
Jmax
COLLECTOR
GE
11V
CE
,
10V
=0V, f = 1 MHz)
=600V, start at T
GATE
<150°C)
-
EMITETR VOLTAGE
12V
20V
-
EMITTER VOLTAGE
IGB50N60T
Rev. 2.5 04.03.2009
13V
30V
J
=25°C,
14V
40V
C
C
C
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