IGB50N60T Infineon Technologies, IGB50N60T Datasheet - Page 7

• Manufacturer Part Number: IGB50N60T
• Description: IGBT 600V 100A 333W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB50N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Power - Max: 333W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 333W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 50.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
8.0mJ
6.0mJ
4.0mJ
2.0mJ
0.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
25°C
0A
E
E
on
off
*) E
*) E
*
T
due to diode recovery
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
due to diode recovery
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
J
I
CE
GE
on
on
,
C
20A
,
JUNCTION TEMPERATURE
and E
and E
= 400V, V
= 0/15V, I
COLLECTOR CURRENT
75°C
ts
ts
include losses
include losses
40A
C
GE
100°C 125°C 150°C
= 50A, R
= 0/15V, R
J
CE
= 175°C,
60A
= 400V,
G
= 7Ω,
G
80A
= 7Ω,
E
E
ts
E
7
TrenchStop
E
*
ts
off
*
on
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
6.0 m J
5.0 m J
4.0 m J
3.0 m J
2.0 m J
1.0 m J
0.0 m J
4m J
3m J
2m J
1m J
0m J
300V
®
E
V
Series
*) E
ts
CE
*) E
*
E
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
du e to d io d e re co v ery
due to diode recovery
,
off
350V
CE
GE
on
COLLECTOR
on
E
and E
on
= 400V, V
= 0/15V, I
an d E
R
*
G
,
400V
GATE RESISTOR
ts
ts
include losses
in c lud e lo s se s
-
EMITTER VOLTAGE
C
GE
IGB50N60T
450V
= 50A, R
= 0/15V, I
J
J
Rev. 2.5 04.03.2009
= 175°C,
= 175°C,
500V
G
= 7Ω,
C
= 50A,
550V
E
E
E
off
on
ts
*
*
p