SKW20N60 Infineon Technologies, SKW20N60 Datasheet - Page 10

• Manufacturer Part Number: SKW20N60
• Description: IGBT NPT 600V 40A 179W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW20N60

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 179W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 179W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 25. Typical diode forward current as
a function of forward voltage
10
10
10
10
40A
35A
30A
25A
20A
15A
10A
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
5A
0A
0.0V
-1
-2
-3
0
K/W
K/W
K/W
K/W
1µs
p
0.05
0.02
0.01
/ T)
D=0.5
0.1
0.2
single pulse
-55°C
10µs
0.5V
V
F
,
t
FORWARD VOLTAGE
25°C
p
,
100µs
PULSE WIDTH
100°C
150°C
R
1.0V
0.358
0.367
0.329
0.216
0.024
R , ( 1 / W )
1
C
1ms
1
=
1
/ R
1
10ms 100ms
1.5V
C
9.02*10
9.42*10
9.93*10
1.19*10
1.92*10
2
=
, ( s ) =
2
/R
R
2
-2
-3
-4
-4
-5
2
2.0V
1s
10
Figure 26. Typical diode forward voltage as
a function of junction temperature
2.0V
1.5V
1.0V
-40°C
T
j
,
JUNCTION TEMPERATURE
0°C
I
40°C
F
SKW20N60
= 40A
80°C 120°C
I
F
= 20A
Jul-02