SKW20N60 Infineon Technologies, SKW20N60 Datasheet - Page 3

• Manufacturer Part Number: SKW20N60
• Description: IGBT NPT 600V 40A 179W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW20N60

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 179W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 179W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
C C
G E
j
R
j
C C
G E
j
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
=1 5 0 C
F
1 )
1 )
1 )
= 2 00 V , I
1 )
= 2 00 V , I
= 16 ,
= 16 ,
/ d t =2 0 0 A/ s
/ d t =2 0 0 A/ s
3
= 40 0 V, I
= 0/ 15 V ,
= 40 0 V, I
= 0/ 15 V ,
Conditions
Conditions
= 18 0 nH ,
= 90 0 pF
= 18 0 nH ,
= 90 0 pF
F
F
C
C
= 2 0 A,
= 2 0 A,
= 2 0 A,
= 2 0 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKW20N60
Value
Value
1270
0.44
0.33
0.77
0.67
0.49
1.12
typ.
typ.
225
300
270
490
180
250
410
365
200
5.5
8.5
36
30
54
30
36
30
63
45
max.
max.
0.53
0.43
0.96
0.81
0.64
1.45
270
300
46
36
65
46
36
76
-
-
-
-
-
-
-
-
-
-
-
-
Jul-02
Unit
ns
mJ
ns
nC
A
A/ s
Unit
ns
mJ
ns
nC
A
A/ s