SKW20N60 Infineon Technologies, SKW20N60 Datasheet - Page 12

• Manufacturer Part Number: SKW20N60
• Description: IGBT NPT 600V 40A 179W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW20N60

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 179W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 179W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
Figure A. Definition of switching times
12
i,v
p(t)
T (t)
j
I
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
F
r
1
di /dt
1
r
F
I
1
r r m
SKW20N60
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r r
r r
t
r r
S
Q
S
+
90% I
F
+
t
F
Q
t
F
=180nH
=900pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
r r m
Jul-02
V
T
t
R
C