SKW20N60 Infineon Technologies, SKW20N60 Datasheet - Page 6

• Manufacturer Part Number: SKW20N60
• Description: IGBT NPT 600V 40A 179W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW20N60

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 179W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 179W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
10ns
10ns
C
GE
= 20A, R
= 0/+15V, R
0°C
t
d(off)
t
t
d(on)
t
d(off)
t
f
10A
t
d(on)
t
t
f
r
r
T
j
I
G
,
C
JUNCTION TEMPERATURE
,
= 1 6 ,
COLLECTOR CURRENT
50°C
G
j
CE
= 150 C, V
= 16 ,
20A
= 400V, V
100°C
30A
CE
GE
= 400V,
= 0/+15V,
40A
150°C
6
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
10ns
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
GE
C
= 0.7mA)
0
= 0/+15V, I
-50°C
T
10
j
,
JUNCTION TEMPERATURE
R
C
G
,
= 20A,
j
20
0°C
GATE RESISTOR
= 150 C, V
SKW20N60
30
50°C
CE
40
= 400V,
100°C
50
t
t
f
t
t
r
d(on)
d(off)
150°C
max.
typ.
min.
Jul-02
60