IKW75N60T Infineon Technologies, IKW75N60T Datasheet
IKW75N60T
Specifications of IKW75N60T
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IKW75N60T Summary of contents
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... V T Marking CE(sat),Tj=25°C j,max 1.5V K75T60 175 C Symbol V I jmax C I jmax 600V, T 175 jmax F I jmax IKW75N60T Series G PG-TO-247-3-21 Package PG-TO-247-3-21 Value 600 225 225 225 428 -40...+175 j -55...+175 260 Rev. 2.4 May Unit ...
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... TrenchStop Series Symbol Conditions Symbol Conditions . 150 IKW75N60T q Max. Value Unit 0.35 K/W 0.6 40 Value Unit min. Typ. max. 600 - - V - 1.5 2 1.65 2.0 - 1.6 - 4.1 4.9 5.7 µ 1000 - - 100 Ω 4620 - - 288 - - 137 - 470 - 687 Rev. 2.4 May 06 ...
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... =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW75N60T q Value Unit min. typ. max 330 - - 121 - ns - 2.4 - µ 921 - A/ s Value Unit min. typ. max 363 - - 182 - ns - 5.8 - µ ...
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... Power Semiconductors ® TrenchStop 100A 10A 1A 10kH z 100kH z 1V Figure 2. Safe operating area = 400V 120A 90A 60A 30A 0A 25°C Figure 4. DC Collector current as a function 4 IKW75N60T Series t =1µs p 10µs 50µs 1ms 10ms DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C ...
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... Figure 7. Typical transfer characteristic (V =20V) CE Power Semiconductors ® TrenchStop 120A V 90A 60A 30A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 8. Typical collector-emitter 5 IKW75N60T Series =20V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175° 50°C 100°C 150°C T ...
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... Figure 10. Typical switching times 5Ω d(off in d(on) 0V -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =5Ω IKW75N60T Series t d(off GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 75A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100°C ...
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... off 2 . .0m J Figure 14. Typical switching energy losses = 175°C, = 5Ω 300V Figure 16. Typical switching energy losses = 400V, = 5Ω IKW75N60T Series *) clu rec off R , GATE RESISTOR function of gate resistor (inductive load 175° 400V 0/15V 75A Dynamic test circuit in Figure and E ...
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... TrenchStop 1nF 480V 100pF 0V 300nC 400nC Figure 18. Typical capacitance as a function 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 18V Figure 20. Short circuit withstand time IKW75N60T Series 10V 20V COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage ( V =0V MHz) GE 11V 12V 13V 14V V ...
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... Figure 22. Diode transient thermal 5µC T =175°C J 4µC 3µC T =25°C 2µC J 1µC 0µC 1000A/µs Figure 24. Typical reverse recovery charge 9 IKW75N60T Series D=0.5 0.2 0 0.1846 0.110373 0.05 0.1681 0.015543 0.1261 0.001239 0.02 0.0818 0.000120 0.04 ...
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... Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V Dynamic test circuit in Figure E) 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 28. Typical diode forward voltage as a function of junction temperature 10 IKW75N60T T =175° =25°C J 1500A/µs DIODE CURRENT SLOPE =400V, I =75A =150A F 75A 37.5A 50° ...
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... PG-TO247-3-21 Power Semiconductors ® TrenchStop Series 11 IKW75N60T q Rev. 2.4 May 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 12 IKW75N60T Rev. 2.4 May 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 13 IKW75N60T q Rev. 2.4 May 06 ...