IKW75N60T Infineon Technologies, IKW75N60T Datasheet - Page 8

• Manufacturer Part Number: IKW75N60T
• Description: IGBT 600V 80A 428W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW75N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 75A
• Current - Collector (ic) (max): 80A
• Power - Max: 428W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 428W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Power Dissipation Pd: 428W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 80.0 A
• Ic(max) @ 100°: 75.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 17. Typical gate charge
Figure 19. Typical short circuit collector
1000A
15V
10V
750A
500A
250A
5V
0V
0A
0nC
12V
V
( I
current as a function of gate-
emitter voltage
( V
GE
100nC
C
CE
=75 A)
,
GATE
Q
14V
GE
400V, T
,
-
GATE CHARGE
EMITTETR VOLTAGE
200nC
120V
j
16V
150 C)
300nC
480V
18V
400nC
8
TrenchStop
Figure 18. Typical capacitance as a function
Figure 20. Short circuit withstand time as a
12µs
10µs
100pF
8µs
6µs
4µs
2µs
0µs
1nF
10V
0V
®
V
CE
Series
V
of collector-emitter voltage
( V
function of gate-emitter voltage
( V
T
,
GE
Jmax
COLLECTOR
GE
11V
CE
,
=600V , start at T
=0V, f = 1 MHz)
GATE
<150°C)
10V
-
EMITETR VOLTAGE
12V
-
IKW75N60T
EMITTER VOLTAGE
13V
J
= 25°C,
Rev. 2.4 May 06
20V
14V
C
C
C
oss
iss
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q