IKW75N60T Infineon Technologies, IKW75N60T Datasheet - Page 6

• Manufacturer Part Number: IKW75N60T
• Description: IGBT 600V 80A 428W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW75N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 75A
• Current - Collector (ic) (max): 80A
• Power - Max: 428W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 428W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Power Dissipation Pd: 428W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 80.0 A
• Ic(max) @ 100°: 75.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100ns
Figure 9. Typical switching times as a
100ns
Figure 11. Typical switching times as a
10ns
25°C
0A
t
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
f
50°C
J
I
CE
GE
,
C
,
JUNCTION TEMPERATURE
t
= 400V, V
r
= 0/15V, I
40A
COLLECTOR CURRENT
75°C
C
GE
100°C 125°C 15 0°C
t
80A
r
= 10A, R
= 0/15V, R
J
CE
=175°C,
= 400V,
G
120A
t
=5Ω,
f
G
= 5Ω,
t
d(off)
t
t
d(on)
d(off)
t
d(on)
6
TrenchStop
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100n s
7V
6V
5V
4V
3V
2V
1V
0V
10 ns
-50°C
®
m in.
Series
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
( I
T
t
t
f
d(off)
C
CE
J
,
0°C
= 1.2mA)
= 400V, V
JUNCTION TEMPERATURE
R
G
typ.
,
GATE RESISTOR
50°C
IKW75N60T
GE
m ax.
= 0/15V, I
J
t
= 175°C,
r
100°C
Rev. 2.4 May 06
C
= 75A,
150°C
t
d(on)
q