IKW75N60T Infineon Technologies, IKW75N60T Datasheet - Page 5

• Manufacturer Part Number: IKW75N60T
• Description: IGBT 600V 80A 428W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW75N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 75A
• Current - Collector (ic) (max): 80A
• Power - Max: 428W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 428W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Power Dissipation Pd: 428W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 80.0 A
• Ic(max) @ 100°: 75.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
120A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
8 0 A
6 0 A
4 0 A
2 0 A
90A
60A
30A
0 A
0A
0 V
0V
V
V
GE
CE
=20V
V
,
11V
( T
(V
13V
15V
9V
COLLECTOR
GE
7V
j
CE
= 25°C)
,
2 V
=20V)
GATE-EMITTER VOLTAGE
1V
T
-
J
= 1 7 5 °C
EMITTER VOLTAGE
4 V
2 5 °C
2V
6 V
3V
8 V
5
TrenchStop
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
120A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
90A
60A
30A
0A
0°C
0V
®
V
V
G E
CE
Series
( T
saturation voltage as a function of
junction temperature
( V
=20V
T
,
11V
13V
15V
COLLECTOR
J
9V
7V
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
= 15V)
1V
50°C
-
IKW75N60T
EMITTER VOLTAGE
2V
100°C
Rev. 2.4 May 06
3V
I
I
C
I
C
150°C
C
=150A
=75A
=37.5A
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