HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 2
![IGBT NPT N-CH 1200V 54A TO-247](/photos/5/31/53163/261-to-247_sml.jpg)
HGTG18N120BN
Manufacturer Part Number
HGTG18N120BN
Description
IGBT NPT N-CH 1200V 54A TO-247
Manufacturer
Fairchild Semiconductor
Specifications of HGTG18N120BN
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 18A
Current - Collector (ic) (max)
54A
Power - Max
390W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
390W
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
54A
Collector Emitter Saturation Voltage Vce(sat)
2.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGTG18N120BN
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG18N120BND
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
1. Pulse width limited by maximum junction temperature.
2. V
At T
At T
CE(PK)
C
C
= 25
= 110
o
= 960V, T
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
C
= 25
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
o
G =
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 25
C
3Ω.
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
BV
t
d(OFF)I
CE(SAT)
SSOA
V
E
GE(TH)
d(ON)I
I
I
E
G(ON)
CES
GES
GEP
OFF
t
t
ON
CES
ECS
rI
fI
HGTG18N120BND
I
I
V
I
V
I
V
T
L = 200µH, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 20)
C
C
C
C
C
C
CE
J
CE
GE
GE
CE
CE
GE
G
= 250µA, V
= 10mA, V
= 18A,
= 150µA, V
= 18A, V
= 18A,
= 150
= 3Ω
= 18A
= 1200V
= 600V
= 960V
= 15V
= ±20V
= 15V
o
TEST CONDITIONS
C, R
CE
GE
CE(PK)
GE
CE
G
= 600V
= 3Ω, V
= 0V
= 0V
= V
= 1200V
J
GE
T
T
T
T
T
V
V
J
= 25
, T
C
C
C
C
C
GE
GE
GE
C110
GEM
= 25
= 125
= 150
= 25
= 150
GES
CES
STG
C25
CM
SC
SC
= 15V
= 20V
o
= 15V,
C
D
L
o
o
C
o
o
C
o
C
C
C
HGTG18N120BND
100A at 1200V
-55 to 150
1200
MIN
100
6.0
15
1200
3.12
160
±20
±30
390
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
54
26
15
8
TYP
2.45
10.5
300
165
220
170
3.8
7.0
1.9
1.8
23
17
90
-
-
-
-
-
-
MAX
±250
HGTG18N120BND Rev. C
250
200
250
200
140
2.7
4.2
2.4
2.2
28
22
4
-
-
-
-
-
-
UNITS
W/
o
o
W
µs
µs
V
A
A
A
V
V
C
C
UNITS
o
C
mA
nC
nC
mJ
mJ
µA
µA
nA
ns
ns
ns
ns
V
V
V
V
V
A
V