HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 4
![IGBT NPT N-CH 1200V 54A TO-247](/photos/5/31/53163/261-to-247_sml.jpg)
HGTG18N120BN
Manufacturer Part Number
HGTG18N120BN
Description
IGBT NPT N-CH 1200V 54A TO-247
Manufacturer
Fairchild Semiconductor
Specifications of HGTG18N120BN
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 18A
Current - Collector (ic) (max)
54A
Power - Max
390W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
390W
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
54A
Collector Emitter Saturation Voltage Vce(sat)
2.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGTG18N120BN
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG18N120BND
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
100
12
10
50
10
8
6
4
2
0
80
60
40
20
1
0
5
5
0
P
f
f
T
R
R
MAX1
MAX2
C
J
ØJC
G
= 150
= CONDUCTION DISSIPATION
= 3Ω, L = 1mH, V
(DUTY FACTOR = 50%)
= 0.32
EMITTER CURRENT
T
10
EMITTER CURRENT
= 0.05 / (t
= (P
I
I
V
CE
CE
C
o
CE
C, R
= -55
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
D
2
, COLLECTOR TO EMITTER VOLTAGE (V)
J
o
- P
= 150
C/W, SEE NOTES
G
o
C
15
d(OFF)I
C
= 3Ω, L = 1mH, V
) / (E
10
o
C, V
CE
ON
T
C
+ t
4
GE
= 960V
20
+ E
= 75
d(ON)I
T
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 12V, V
J
OFF
= 25
o
T
C, V
C
T
)
)
= 25
C
CE
o
25
C, V
GE
= 150
110
110
GE
6
= 960V
75
75
T
o
= 15V, IDEAL DIODE
C
C
GE
o
o
= 15V
o
o
20
C
C
C
C 12V
o
Unless Otherwise Specified (Continued)
C
= 12V, V
30
V
15V
15V
12V
GE
8
GE
GE
35
30
= 15V
HGTG18N120BND
= 12V
10
40
40
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
100
30
25
20
15
10
80
60
40
20
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5
0
12
0
5
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
R
G
T
J
= 3Ω, L = 1mH, V
V
= 150
CE
V
EMITTER CURRENT
V
10
I
GE
CE
CE
= 960V, R
T
o
13
, GATE TO EMITTER VOLTAGE (V)
C
2
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
C, V
= -55
15
GE
o
G
C
= 12V OR 15V
= 3Ω, T
CE
4
14
= 960V
20
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
J
= 125
T
J
= 25
25
o
t
I
SC
SC
6
C
T
o
C
15
C, V
= 25
30
GE
HGTG18N120BND Rev.C
o
C
= 12V OR 15V
T
C
8
= 150
GE
35
16
= 15V
300
250
200
150
100
50
o
C
10
40