HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 7
![IGBT NPT N-CH 1200V 54A TO-247](/photos/5/31/53163/261-to-247_sml.jpg)
HGTG18N120BN
Manufacturer Part Number
HGTG18N120BN
Description
IGBT NPT N-CH 1200V 54A TO-247
Manufacturer
Fairchild Semiconductor
Specifications of HGTG18N120BN
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 18A
Current - Collector (ic) (max)
54A
Power - Max
390W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
390W
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
54A
Collector Emitter Saturation Voltage Vce(sat)
2.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGTG18N120BN
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG18N120BND
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
circuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
R
G
= 3Ω
GEM
. Exceeding the rated V
L = 1mH
HGTG18N120BND
+
-
GE
can result in
V
DD
= 960V
HGTG18N120BND
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must not
exceed P
conduction losses (P
P
E
shown in Figure 21. E
power loss (I
integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
E
MAX1
MAX2
V
V
I
C
CE
ON
OFF
GE
CE
= (V
and E
; i.e., the collector current equals zero (I
is defined by f
is defined by f
CE
FIGURE 21. SWITCHING TEST WAVEFORMS
D
. A 50% duty factor was used (Figure 3) and the
x I
OFF
CE
CE
d(OFF)I
t
MAX1
d(OFF)I
)/2.
are defined in the switching waveforms
x V
90%
10%
CE
C
MAX2
MAX1
or f
) are approximated by
and t
ON
) during turn-on and E
t
D
fI
MAX2
) is defined by P
is the integral of the instantaneous
= (P
d(ON)I
= 0.05/(t
E
OFF
; whichever is smaller at each
90%
D
CE
- P
are defined in Figure 21.
) plots are possible using
d(OFF)I
C
E
)/(E
ON
10%
D
OFF
t
= (T
CE
d(ON)I
+ t
HGTG18N120BND Rev.C
OFF
d(ON)I
+ E
t
x V
CE
JM
rI
JM
ON
CE
= 0).
- T
is the
. t
).
). The
) during
C
d(OFF)I
)/R
θJC
.