HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 6

IGBT NPT N-CH 1200V 54A TO-247

HGTG18N120BN

Manufacturer Part Number
HGTG18N120BN
Description
IGBT NPT N-CH 1200V 54A TO-247
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of HGTG18N120BN

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 18A
Current - Collector (ic) (max)
54A
Power - Max
390W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
390W
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
54A
Collector Emitter Saturation Voltage Vce(sat)
2.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG18N120BN
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG18N120BND
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
100
6
5
4
3
2
1
0
10
1
0
0
10
10
FREQUENCY = 1MHz
10
C
RES
-1
-2
0
10
-5
VOLTAGE
VOLTAGE DROP
0.05
0.02
0.01
0.5
0.2
0.1
V
150
5
CE
1
, COLLECTOR TO EMITTER VOLTAGE (V)
o
C
C
IES
SINGLE PULSE
V
F
, FORWARD VOLTAGE (V)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
2
C
OES
10
-4
25
15
o
3
C
Unless Otherwise Specified (Continued)
20
4
t
1
, RECTANGULAR PULSE DURATION (s)
HGTG18N120BND
10
-3
25
DUTY FACTOR, D = t
PEAK T
5
J
= (P
D
X Z
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
θJC
70
60
50
40
30
20
10
30
25
20
15
10
1
5
0
1
/ t
X R
10
0
2
T
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs
-2
C
θJC
= 25
) + T
t
V
o
rr
t
t
CE
C, dI
a
b
C
, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
P
EC
D
I
F
/dt = 200A/µs
, FORWARD CURRENT (A)
2
V
C
GE
10
= 110
-1
= 15V OR 12V
5
o
C
t
1
3
t
2
HGTG18N120BND Rev.C
V
10
GE
4
= 10V
10
0
20
5

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