PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 10

• Manufacturer Part Number: PMBFJ620,115
• Description: JFET N-CHAN DUAL 25V SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ620,115

• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: 2 N-Channel (Dual)
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Power - Max: 190mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2084-2; 934057915115; PMBFJ620 T/R

Philips Semiconductors
9. Package outline
Fig 17. Package outline.
9397 750 13006
Product data sheet
Plastic surface mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
1
6
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
0
REFERENCES
Rev. 01 — 11 May 2004
1.3
e
w
B
M
B
0.65
e
1
SC-88
scale
EIAJ
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
Dual N-channel field-effect transistor
H E
E
0.2
v
detail X
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.2
EUROPEAN
w
L p
Q
0.1
A
y
PMBFJ620
c
X
v
ISSUE DATE
M
97-02-28
A
SOT363
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