PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 4

• Manufacturer Part Number: PMBFJ620,115
• Description: JFET N-CHAN DUAL 25V SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ620,115

• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: 2 N-Channel (Dual)
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Power - Max: 190mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2084-2; 934057915115; PMBFJ620 T/R

Philips Semiconductors
7. Static characteristics
Table 7:
T
8. Dynamic characteristics
Table 8:
T
9397 750 13006
Product data sheet
Symbol
Per FET
V
V
V
I
I
R
Symbol
Per FET
C
C
g
g
g
g
V
DSS
GSS
j
j
y
y
is
fs
rs
os
(BR)GSS
GSoff
GSS
n
DSon
iss
rss
= 25 C unless otherwise specified.
= 25 C unless otherwise specified.
fs
os
Characteristics
Characteristics
Parameter
gate-source breakdown
voltage
gate-source cut-off voltage
gate-source forward voltage
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
common source forward
transfer admittance
common source output
admittance
Parameter
input capacitance
reverse transfer capacitance
common source input
conductance
common source transfer
conductance
common source reverse
conductance
common source output
conductance
equivalent input noise voltage V
Conditions
I
I
I
V
V
V
I
I
Conditions
V
V
V
V
V
V
V
V
V
V
V
G
D
G
D
D
DS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 1 A; V
= 10 mA; V
= 10 mA; V
= 1 A; V
= 1 mA; V
= 10 V; V
= 10 V; V
= 10 V; V
= 0 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 15 V; V
= 0 V; V
Rev. 01 — 11 May 2004
DS
DS
GS
DS
D
D
D
D
D
D
D
D
D
DS
GS
DS
DS
GS
GS
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 Hz
= 10 V
DS
= 0 V
= 100 mV
= 10 V; f = 1 MHz
= 0 V
= 10 V
= 10 V
= 0 V
= 10 V; f =1 MHz
= 0 V; T
= 0 V
amb
= 25 C
Dual N-channel field-effect transistor
Min
-
24
-
-
10
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
25
2
Typ
-
-
-
-
-
50
-
-
Typ
3
6
1.3
200
3
13
12
150
400
6
PMBFJ620
30
450
Max
-
1
60
-
-
250
Max
5
-
2.5
-
-
-
-
-
-
-
-
-
6.5
1
Unit
V
V
V
mA
nA
mS
Unit
pF
pF
pF
mS
mS
mS
nV/ Hz
S
S
S
S
S
S
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