PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 4
![JFET N-CHAN DUAL 25V SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
PMBFJ620,115
Manufacturer Part Number
PMBFJ620,115
Description
JFET N-CHAN DUAL 25V SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ620115.pdf
(13 pages)
Specifications of PMBFJ620,115
Current - Drain (idss) @ Vds (vgs=0)
24mA @ 10V
Drain To Source Voltage (vdss)
25V
Fet Type
2 N-Channel (Dual)
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
2V @ 1µA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Resistance - Rds(on)
50 Ohm
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Power - Max
190mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2084-2
934057915115
PMBFJ620 T/R
934057915115
PMBFJ620 T/R
Philips Semiconductors
7. Static characteristics
Table 7:
T
8. Dynamic characteristics
Table 8:
T
9397 750 13006
Product data sheet
Symbol
Per FET
V
V
V
I
I
R
Symbol
Per FET
C
C
g
g
g
g
V
DSS
GSS
j
j
y
y
is
fs
rs
os
(BR)GSS
GSoff
GSS
n
DSon
iss
rss
= 25 C unless otherwise specified.
= 25 C unless otherwise specified.
fs
os
Characteristics
Characteristics
Parameter
gate-source breakdown
voltage
gate-source cut-off voltage
gate-source forward voltage
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
common source forward
transfer admittance
common source output
admittance
Parameter
input capacitance
reverse transfer capacitance
common source input
conductance
common source transfer
conductance
common source reverse
conductance
common source output
conductance
equivalent input noise voltage V
Conditions
I
I
I
V
V
V
I
I
Conditions
V
V
V
V
V
V
V
V
V
V
V
G
D
G
D
D
DS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 1 A; V
= 10 mA; V
= 10 mA; V
= 1 A; V
= 1 mA; V
= 10 V; V
= 10 V; V
= 10 V; V
= 0 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 15 V; V
= 0 V; V
Rev. 01 — 11 May 2004
DS
DS
GS
DS
D
D
D
D
D
D
D
D
D
DS
GS
DS
DS
GS
GS
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 MHz
= 10 mA; f = 450 MHz
= 10 mA; f = 100 Hz
= 10 V
DS
= 0 V
= 100 mV
= 10 V; f = 1 MHz
= 0 V
= 10 V
= 10 V
= 0 V
= 10 V; f =1 MHz
= 0 V; T
= 0 V
amb
= 25 C
Dual N-channel field-effect transistor
Min
-
24
-
-
10
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
25
2
Typ
-
-
-
-
-
50
-
-
Typ
3
6
1.3
200
3
13
12
150
400
6
PMBFJ620
30
450
Max
-
1
60
-
-
250
Max
5
-
2.5
-
-
-
-
-
-
-
-
-
6.5
1
Unit
V
V
V
mA
nA
mS
Unit
pF
pF
pF
mS
mS
mS
nV/ Hz
S
S
S
S
S
S
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