PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 2

• Manufacturer Part Number: PMBFJ620,115
• Description: JFET N-CHAN DUAL 25V SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ620,115

• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: 2 N-Channel (Dual)
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Power - Max: 190mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2084-2; 934057915115; PMBFJ620 T/R

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 13006
Product data sheet
Table 2:
Table 3:
Table 4:
[1]
Pin
1
2
3
4
5
6
Type number
PMBFJ620
Type number
PMBFJ620
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Discrete pinning information
Ordering information
Marking
Description
source (1)
source (2)
gate (2)
drain (2)
drain (1)
gate (1)
Package
Name
-
Rev. 01 — 11 May 2004
Description
plastic surface mounted package; 6 leads
Marking code
A8*
Simplified outline
Dual N-channel field-effect transistor
6
1
5
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
SOT363
4
3
PMBFJ620
Symbol
6
3
sym034
Version
SOT363
2 of 13
5
1
4
2