PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 9

JFET N-CHAN DUAL 25V SOT363

PMBFJ620,115

Manufacturer Part Number
PMBFJ620,115
Description
JFET N-CHAN DUAL 25V SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBFJ620,115

Current - Drain (idss) @ Vds (vgs=0)
24mA @ 10V
Drain To Source Voltage (vdss)
25V
Fet Type
2 N-Channel (Dual)
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
2V @ 1µA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Resistance - Rds(on)
50 Ohm
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Power - Max
190mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2084-2
934057915115
PMBFJ620 T/R
Philips Semiconductors
9397 750 13006
Product data sheet
Fig 13. Input admittance as a function of frequency;
Fig 15. Reverse transfer admittance as a function of
b
g
(mS)
(mS)
rs
is
, b
, g
100
V
typical values.
V
frequency; typical values.
10
10
0.1
10
is
10
DS
DS
1
10
rs
10
1
2
1
2
10
= 10 V; I
= 10 V; I
D
D
= 10 mA; T
= 10 mA; T
100
100
amb
amb
= 25 C.
= 25 C.
b
g
rs
rs
b
g
is
is
f (MHz)
f (MHz)
mcd228
mcd226
Rev. 01 — 11 May 2004
1000
1000
Fig 14. Forward transfer admittance as a function of
Fig 16. Output admittance as a function of frequency;
g
b
fs,
(mS)
os,
(mS)
V
frequency; typical values.
V
typical values.
100
g
b
100
0.1
os
10
fs
DS
DS
10
1
1
10
10
= 10 V; I
= 10 V; I
Dual N-channel field-effect transistor
D
D
= 10 mA; T
= 10 mA; T
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
amb
amb
100
b os
g os
= 25 C.
= 25 C.
g
b
PMBFJ620
fs
fs
f (MHz)
f (MHz)
mcd225
mcd227
1000
1000
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