PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 3

JFET N-CHAN DUAL 25V SOT363

PMBFJ620,115

Manufacturer Part Number
PMBFJ620,115
Description
JFET N-CHAN DUAL 25V SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBFJ620,115

Current - Drain (idss) @ Vds (vgs=0)
24mA @ 10V
Drain To Source Voltage (vdss)
25V
Fet Type
2 N-Channel (Dual)
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
2V @ 1µA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Resistance - Rds(on)
50 Ohm
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Power - Max
190mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2084-2
934057915115
PMBFJ620 T/R
Philips Semiconductors
5. Limiting values
6. Thermal characteristics
9397 750 13006
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6:
[1]
Symbol
Per FET
V
V
V
I
P
T
T
Symbol
R
G
Fig 1. Power derating curve.
stg
j
DS
GSO
GDO
tot
th(j-s)
T
(1) Double loaded.
(2) Single loaded.
s
is the temperature at the soldering point of the gate pins, see
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain-gate voltage
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
Parameter
thermal resistance from junction
to soldering points
(mW)
P
tot
400
300
200
100
Rev. 01 — 11 May 2004
0
0
50
Conditions
open drain
open source
T
Conditions
single loaded
double loaded
100
s
(1)
(2)
90 C
Dual N-channel field-effect transistor
150
Figure
T
001aaa742
s
( C)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1.
200
[1]
[1]
Min
-
-
-
-
-
-
65
Typ
315
160
PMBFJ620
Max
50
190
+150
150
25
25
25
Unit
K/W
K/W
Unit
V
V
V
mA
mW
C
C
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