PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 5

• Manufacturer Part Number: PMBFJ620,115
• Description: JFET N-CHAN DUAL 25V SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ620,115

• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: 2 N-Channel (Dual)
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Power - Max: 190mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2084-2; 934057915115; PMBFJ620 T/R

Philips Semiconductors
9397 750 13006
Product data sheet
Fig 2. Drain current as a function of gate-source
Fig 4. Common-source output conductance as a
(mA)
I
DSS
( S)
g
150
100
os
50
50
40
30
20
10
0
0
V
cut-off voltage; typical values.
V
function of gate-source cut-off voltage; typical
values.
0
0
DS
DS
= 10 V; T
= 10 V; I
1
D
1
j
= 25 C.
= 10 mA; T
2
2
j
= 25 C.
3
3
V
V
GSoff
GSoff
mcd221
mcd220
(V)
(V)
4
4
Rev. 01 — 11 May 2004
Fig 3. Common source forward transfer admittance as
Fig 5. Drain-source on-state resistance as a function
R
DSon
( )
(mS)
y
fs
20
16
12
80
60
40
20
8
4
0
0
V
a function of gate-source cut-off voltage;
typical values.
V
of gate-source cut-off voltage; typical values.
0
0
DS
DS
= 10 V; I
= 100 mV; V
Dual N-channel field-effect transistor
D
1
2
= 10 mA; T
GS
= 0 V; T
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2
4
j
= 25 C.
j
= 25 C.
PMBFJ620
3
6
V
V
GSoff
GSoff
mcd219
mcd222
(V)
(V)
4
8
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