PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 6

• Manufacturer Part Number: PMBFJ620,115
• Description: JFET N-CHAN DUAL 25V SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ620,115

• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: 2 N-Channel (Dual)
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Power - Max: 190mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2084-2; 934057915115; PMBFJ620 T/R

Philips Semiconductors
9397 750 13006
Product data sheet
Fig 6. Typical output characteristics.
Fig 8. Reverse transfer capacitance as a function of
(mA)
(pF)
C
I
D
40
30
20
10
rs
0
4
3
2
1
0
T
V
gate-source voltage; typical values.
10
0
j
DS
= 25 C.
= 10 V; T
8
4
j
= 25 C.
6
8
4
12
V GS = 0 V
2
V
V
0.5 V
1.5 V
2.5 V
DS
mcd217
GS
mcd224
1 V
2 V
(V)
(V)
16
0
Rev. 01 — 11 May 2004
Fig 7. Typical transfer characteristics.
Fig 9. Input capacitance as a function of gate-source
(mA)
(pF)
C
I
V
V
voltage; typical values.
D
10
40
30
20
10
is
DS
8
6
4
2
0
DS
0
10
4
= 10 V; T
= 10 V; T
Dual N-channel field-effect transistor
8
j
j
= 25 C.
= 25 C.
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6
2
PMBFJ620
4
1
2
V
V
GS
GS
mcd214
mcd223
(V)
(V)
0
0
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