FDG6321C Fairchild Semiconductor, FDG6321C Datasheet
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FDG6321C
Specifications of FDG6321C
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FDG6321C Summary of contents
Page 1
... Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). TM SOT-8 SuperSOT - unless otherwise noted A N-Channel 25 0.5 1.5 (Note 1) (Note 1) November 1998 = 0. 4.5V. DS(ON 0. DS(ON 1 -4.5V. DS(ON 1 DS(ON) GS < 1.5 V). GS(th) SO-8 SOIC- P-Channel - -0.41 -1.2 0.3 -55 to 150 6 415 = 2 -2.7V. Units °C kV °C/W FDG6321C Rev. D ...
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... C P-Ch 2.1 N-Ch 0.34 0.45 T =125°C 0.55 0.72 J 0.44 0.6 P-Ch 0.85 1.1 1.2 1.8 T =125°C J 1.15 1.5 N-Ch 0.5 P-Ch -0.41 N-Ch 1.45 P-Ch 0.9 N-Ch 50 P-Ch 62 N-Ch 28 P-Ch 34 N-Ch 9 P-Ch 10 FDG6321C Rev. D Units µA µ mV ...
Page 3
... C/W on minimum mounting pad on FR-4 board in still air. JA Type Min Typ Max Units N- P- N- N-Ch 1.64 2.3 nC P-Ch 1.1 1.5 N-Ch 0.38 nC P-Ch 0.31 N-Ch 0.45 nC P-Ch 0.29 N-Ch 0.25 A P-Ch -0.25 N-Ch 0.8 1.2 V P-Ch -0.85 -1.2 is guaranteed by JC FDG6321C Rev. D ...
Page 4
... T = 25°C A 1.5 2 2 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 0. 1.2 FDG6321C Rev. D ...
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... Figure 9. Maximum Safe Operating Area. (continued) 200 = 5V DS 10V 15V 0.1 1.6 2 Figure 8. Capacitance Characteristics 0.0001 Figure 10. Single Pulse Maximum Power MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. FDG6321C Rev iss C oss C rss 25 200 ...
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... DRAIN CURRENT (A) D Drain Current and Gate Voltage -0. 125 ° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDG6321C Rev. D -4.5V 1 1.2 25° 1.2 ...
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... Figure 19. Maximum Safe Operating Area. (continued) 200 -10V 80 -15V 0.1 1.2 1.6 Figure 18. Capacitance Characteristics 0.0001 Figure 20. Single Pulse Maximum Power C iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. FDG6321C Rev 200 ...
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... Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. (continued) 0.01 0 TIME (sec ( =415 °C/W JA P(pk ( Duty Cycle 100 200 FDG6321C Rev. D ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...