FDG6321C Fairchild Semiconductor, FDG6321C Datasheet - Page 8
FDG6321C
Manufacturer Part Number
FDG6321C
Description
MOSFET N/P-CH DUAL 25V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDG6321C.pdf
(9 pages)
Specifications of FDG6321C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
450 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
500mA, 410mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
1.45 S, 0.9 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V @ N Channel or - 8 V @ P Channel
Continuous Drain Current
0.5 A @ N Channel or 0.41 A @ P Channel
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
25V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
800mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6321C
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG6321C
Manufacturer:
FSC
Quantity:
1 308
Company:
Part Number:
FDG6321C
Manufacturer:
SITRONIX
Quantity:
5 563
Part Number:
FDG6321C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Thermal Characteristics: N & P-Channel
0.005
0.002
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 21. Transient Thermal Response Curve.
Single Pulse
0.001
Transient thermalresponse will change depending on the circuit board design.
Thermal characterization performed using the conditions described in note 1.
0.01
t , TIME (sec)
1
0.1
1
(continued)
P(pk)
T - T
Duty Cycle, D = t / t
J
R
R
10
t
JA
1
A
JA
t
= P * R
(t) = r(t) * R
2
=415 °C/W
JA
1
(t)
2
JA
100
200
FDG6321C Rev. D