FDG6321C Fairchild Semiconductor, FDG6321C Datasheet - Page 6

MOSFET N/P-CH DUAL 25V SC70-6

FDG6321C

Manufacturer Part Number
FDG6321C
Description
MOSFET N/P-CH DUAL 25V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDG6321C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
450 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
500mA, 410mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
1.45 S, 0.9 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V @ N Channel or - 8 V @ P Channel
Continuous Drain Current
0.5 A @ N Channel or 0.41 A @ P Channel
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
25V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
800mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6321C

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Typical Electrical Characteristics: P-Channel
1.2
0.9
0.6
0.3
Figure 11. On-Region Characteristics.
0.8
0.6
0.4
0.2
0
Figure 13. On-Resistance Variation
Figure 15. Transfer Characteristics.
1
0
0
1.6
1.4
1.2
0.8
0.6
0.5
1
-50
V
DS
V
I = -0.41A
V
D
GS
= -5V
GS
-25
= -4.5V
=-4.5V
1
-V
-V
with Temperature.
1
GS
DS
T , JUNCTION TEMPERATURE (°C)
0
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-3.0V
J
-2.7V
1.5
25
2
-2.5V
50
T = -55°C
J
2
75
-2.0V
25°C
3
100
2.5
125°C
-1.5V
125
4
3
150
0.0001
5
4
3
2
1
0
0.001
2.5
1.5
0.5
1
0.01
2
1
Figure 16. Body Diode Forward Voltage
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
0.1
0
1
0.2
V
GS
V
= 0V
GS
0.2
= -2.0V
-V
-V
SD
0.4
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
Drain Current and Gate Voltage.
Variation with Source Current
and Temperature.
Gate-to-Source Voltage.
T = 125°C
-I , DRAIN CURRENT (A)
0.4
J
D
-2.5V
0.6
25°C
3
0.6
-2.7V
-55°C
0.8
-3.0V
0.8
4
-3.5V
T = 125 °C
I = -0.2A
J
D
1
FDG6321C Rev. D
1
-4.5V
25° C
1.2
1.2
5

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