FDS4559 Fairchild Semiconductor, FDS4559 Datasheet - Page 2

• Manufacturer Part Number: FDS4559
• Description: MOSFET N/P-CH 60V 4.5/3.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4559

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 14 S, 9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4559; FDS4559TR

Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
V
R
I
g
C
C
C
Drain-Source Avalanche Ratings
W
I
BV
I
I
D(on)
g
gs
gd
Electrical Characteristics
Symbol
AR
Off Characteristics
DSS
GSS
On Characteristics
Dynamic Characteristics
FS
V
BV
GS(th)
DS(on)
iss
oss
rss
DSS
GS(th)
T
DSS
T
J
DSS
J
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
Parameter
(Note 2)
(Note 2)
V
V
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
Q1
V
f = 1.0 MHz
Q2
V
f = 1.0 MHz
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
D
D
D
D
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
GS
DD
GS
DS
DS
DD
(Note 1)
= 250 µA, Referenced to 25 C
= –250 µA, Referenced to 25 C
= 250 µA, Referenced to 25 C
= –250 µA, Referenced to 25 C
= 48 V, V
= –48 V, V
= V
= V
= 10 V, I
= –5 V, I
= 25 V, V
= –30 V, V
= 30 V, I
= –30 V, I
= 30 V, I
= –30 V, I
= 0 V, I
= 0 V, I
= +20 V, V
= +20 V, V
= 10 V, I
= 10 V, I
= 4.5 V, I
= –10 V, I
= –10 V, I
= –4.5 V, I
= 10 V, V
= –10 V, V
= 10V, R
= –10 V, R
= 30 V,
GS
GS
Test Conditions
T
, I
, I
A
= 25°C unless otherwise noted
D
D
D
D
D
D
D
D
D
D
= 250 µA
= –250 µA
GEN
= 250 µA
= –250 µA
D
GS
GS
DS
D
D
D
D
= 4.5 A
= –3 5 A
= 1 A,
= 4.5 A, V
= 4.5 A
= 4.5 A, T
D
GS
GS
DS
DS
DS
GEN
= 4 A
= –3.5 A, V
= –3.5 A
= –3.5 A, T
= –1 A,
I
= 0 V
= –3.1 A
= 5 V
= 0 V,
D
= 6
= 0 V
= 0 V
= 0 V
= –5 V
= 0 V,
= 4.5 A
= 6
J
GS
= 125 C
J
GS
= 10 V
= 125 C
= –10V
Type Min
Q1
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–60
–20
60
–1
20
1
Typ Max Units
12.5
–1.6
–5.5
–49
130
105
650
759
2.4
2.5
2.6
3.0
2.2
11
10
19
19
12
15
58
42
72
55
82
14
80
90
35
39
7
8
6
4
9
+100
+100
105
190
135
4.5
20
14
18
20
35
34
15
22
18
21
–1
90
–3
55
94
75
1
3
FDS4559 Rev C1(W)
mV/ C
mV/ C
m
mJ
nA
pF
pF
pF
V
A
V
A
S
nC
nC
nC
ns
ns
ns
ns
A