FDS4559 Fairchild Semiconductor, FDS4559 Datasheet - Page 4

• Manufacturer Part Number: FDS4559
• Description: MOSFET N/P-CH 60V 4.5/3.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4559

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 14 S, 9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4559; FDS4559TR

Typical Characteristics: Q2
15
12
15
12
9
6
3
0
9
6
3
0
Figure 3. On-Resistance Variation with
1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0
Figure 1. On-Region Characteristics.
2
1
V
-50
Figure 5. Transfer Characteristics.
V
GS
DS
= -10V
V
-6.0V
-5.0V
I
= -5V
D
GS
= -3.5A
-25
= -10V
1
-V
-V
2
GS
0
T
DS
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
-4.0V
25
2
-3.5V
-4.5V
T
50
A
3
= -55
75
o
C
3
-3.0V
100
125
o
4
C)
125
o
C
4
25
-2.5V
o
C
150
175
5
5
Figure 6. Body Diode Forward Voltage Variation
0.4
0.3
0.2
0.1
0.001
0.01
0
100
0.1
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
1
0
0
V
Drain Current and Gate Voltage.
GS
T
A
= 0V
= 25
0.2
V
Gate-to-Source Voltage.
GS
-V
o
C
= -3.5V
-V
SD
2
4
, BODY DIODE FORWARD VOLTAGE (V)
GS
, GATE TO SOURCE VOLTAGE (V)
T
0.4
A
-4.0V
= 125
T
-I
A
D
, DRAIN CURRENT (A)
= 125
o
4
C
0.6
-4.5V
o
C
6
25
-5.0V
o
0.8
C
6
-6.0V
-55
o
C
1
-7.0V
8
8
FDS4559 Rev C1(W)
-8.0V
I
D
1.2
= -1.5A
-10V
1.4
10
10