FDS4559 Fairchild Semiconductor, FDS4559 Datasheet - Page 5

• Manufacturer Part Number: FDS4559
• Description: MOSFET N/P-CH 60V 4.5/3.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4559

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 14 S, 9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4559; FDS4559TR

Typical Characteristics: Q2
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
SINGLE PULSE
R
I
D
R
V
JA
= -3.0A
DS(ON)
T
GS
A
= 135
= 25
= -10V
LIMIT
o
o
C
C/W
-V
4
DS
, DRAIN-SOURCE VOLTAGE (V)
1
Q
g
, GATE CHARGE (nC)
8
DC
10s
1s
V
10
100ms
DS
= 10V
10ms
12
100 s
30V
100
20V
16
1200
1000
40
30
20
10
0
800
600
400
200
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
RSS
10
0.1
-V
Power Dissipation.
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
OSS
20
1
t
1
, TIME (sec)
30
10
C
ISS
40
SINGLE PULSE
R
JA
T
A
100
f = 1 MHz
V
= 135°C/W
GS
= 25°C
50
FDS4559 Rev C1(W)
= 0 V
1000
60