FDC6301N Fairchild Semiconductor, FDC6301N Datasheet - Page 2

• Manufacturer Part Number: FDC6301N
• Description: IC FET DGTL N-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6301N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.25 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: - 0.5 V to 8 V
• Continuous Drain Current: 0.22 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 220mA
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 850mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6301NTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
Inverter Electrical Characteristics
I
V
V
R
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSS
D(ON)
D(on)
r
D(off)
f
O (off)
FS
BV
V
GS(th)
I (off)
I (on)
DS(ON)
iss
oss
rss
O (on)
g
gs
gd
DSS
GS(th)
design while R
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
a. 140
CA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage Temp.Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Zero Input Voltage Output Current
Input Voltage
Output to Ground Resistance
2oz copper.
is determined by the user's board design. R
O
C/W on a 0.125 in
(Note 2)
2
pad of
(Note 2)
(T
A
= 25
JA
shown below for single device operation on FR-4 in still air.
O
C unless otherwise noted )
b. 180
of 2oz copper.
(T
O
C/W on a 0.005 in
A
= 25°C unless otherwise noted)
Conditions
V
I
V
V
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
CC
CC
O
I
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 2.7 V, I
= 0.3 V, I
= 0 V, I
= 20 V, V
= 8 V, V
= V
= 2.7 V, I
= 4.5 V, I
= 2.7 V, V
= 5 V, I
= 10 V, V
= 6 V, I
= 4.5 V, R
= 5 V, I
= 4.5 V
= 20 V, V
= 5 V, I
2
GS
of pad
, I
D
D
D
D
D
O
O
O
DS
= 0.4 A
= 250 µA
= 0.2 A,
= 250 µA
= 10 µA
D
D
= 0.005 A
= 0.2 A
GS
GS
= 0.5 A,
I
= 0 V
DS
GEN
= 0 V
= 0.2 A
= 0.4 A
= 0 V
= 0 V,
= 5 V
= 50
T
T
o
J
o
J
C
C
= 55°C
=125°C
0.65
Min
0.2
25
1
0.85
0.25
0.49
0.22
0.07
Typ
-2.1
3.8
6.3
3.1
9.5
1.3
4.5
3.2
3.8
25
6
5
4
Max
JC
100
1.5
0.7
0.5
10
10
10
is guaranteed by
FDC6301N Rev.D
1
5
9
4
8
7
1
5
mV /
mV /
Units
µA
µA
nA
nC
nC
nC
µA
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
V
V
o
o
C
C