FDC6301N Fairchild Semiconductor, FDC6301N Datasheet - Page 3

• Manufacturer Part Number: FDC6301N
• Description: IC FET DGTL N-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6301N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.25 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: - 0.5 V to 8 V
• Continuous Drain Current: 0.22 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 220mA
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 850mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6301NTR

Typical Electrical Characteristics
0.5
0.4
0.3
0.2
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0
1
0
0.15
0.05
-50
0.2
0.1
0
0.5
V
Figure 1. On-Region Characteristics.
V
I
Figure 3.
D
GS
GS
V
= 0.2A
Figure 5. Transfer Characteristics.
-25
DS
= 2.7 V
= 4.5V
= 5.0V
1
V
DS
with Temperature.
0
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN-SOURCE VOLTAGE (V)
On-Resistance Variation
GS
3.5
1
, GATE TO SOURCE VOLTAGE (V)
3.0
2
25
2.7
2.5
50
1.5
3
2.0
75
T = -55°C
J
1 0 0
1.5
4
2
25°C
1 2 5
125°C
5
1 5 0
2.5
15
12
9
6
3
0
0.0001
0.001
2
1.4
1.2
0.8
0.6
0.01
1
Figure 4.
0.5
0.2
0.1
0
Variation with Source Current and Temperature.
25°C
0.2
V
V
Figure 2. On-Resistance Variation with
GS
GS
Figure 6.
Gate-To- Source Voltage.
2.5
= 2.0V
= 0V
Drain Current and Gate Voltage.
125°C
0.1
On Resistance Variation with
V
V
0.4
GS
SD
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
3
I , DRAIN CURRENT (A)
Body Diode Forward Voltage
D
2.5
0.2
T = 125°C
J
0.6
2.7
3.5
25°C
3.0
0.3
-55°C
0.8
3.5
4
4.0
0.4
I
D
1
4.5
4.5
FDC6301N Rev.D
= 0.2A
0.5
1.2
5