FDG6317NZ Fairchild Semiconductor, FDG6317NZ Datasheet - Page 2

• Manufacturer Part Number: FDG6317NZ
• Description: MOSFET N-CH DUAL 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDG6317NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 66.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDG6317NZ Rev.B1 (W)
Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Electrical Characteristics
Off Characteristics
On Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
Symbol
BV
I
I
I
V
R
I
g
I
V
t
Q
d(on)
r
d(off)
f
DSS
GSS
GSS
D(on)
S
rr
the drain pins. R
FS
iss
oss
rss
G
BV
V
g
gs
gd
GS(th)
DS(on)
SD
rr
GS(th)
JA
DSS
T
T
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
Parameter
(Note 2)
(Note 2)
JA
is determined by the user's board design. R
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
D
D
F
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
T
= 0.7 A,
= 250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
A
= 25°C unless otherwise noted
= 16 V,
= V
= 5 V,
= 10 V,
= 10 V,
= 0 V,
=
=
= 4.5 V, I
= 2.5 V, I
= 4.5 V, I
= 4.5 V, V
= 15 mV, f = 1.0 MHz
= 10 V,
= 4.5 V, R
= 4.5 V
= 0 V,
GS
Test Conditions
12 V, V
4.5 V, V
,
2
I
V
I
I
V
I
I
I
d
D
D
D
D
D
D
D
D
S
iF
GS
DS
DS
DS
GEN
GS
= 0.25 A
= 250 A
= 250 A
= 0.7 A
= 0.6 A
= 0.7 A, T
= 0.7 A
= 1 A,
= 0.7 A,
/d
= 5 V
= 0 V
= 0 V
= 0 V
t
= 0 V,
= 6
= 100 A/µs
(Note 2)
J
=125°C
JA
= 415°C/W when mounted on a minimum pad .
Min
0.6
20
1
Typ
66.5
0.76
0.18
0.20
300
450
390
1.2
1.8
5.8
5.5
7.5
2.5
0.8
8.3
1.2
13
–2
19
10
7
Max Units
0.25
400
550
560
1.5
1.1
1.2
11
15
15
5
www.fairchildsemi.com
1
10
1
mV/ C
mV/ C
m
nS
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A
A
A