FDG6317NZ Fairchild Semiconductor, FDG6317NZ Datasheet - Page 3

• Manufacturer Part Number: FDG6317NZ
• Description: MOSFET N-CH DUAL 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDG6317NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 66.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDG6317NZ Rev.B1 (W)
Typical Characteristics
1.5
0.5
1.5
0.5
2
1
0
2
1
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
0
Figure 3. On-Resistance Variation with
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
DS
V
GS
4.5V
V
= 5V
I
D
GS
-25
= 10V
= 0.7A
0.5
=10V
V
V
1
GS
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
, JUNCTION TEMPERATURE (
2.0V
1
25
T
3.0V
A
= 125
2
50
o
C
1.5
75
25
2.5V
o
C
100
o
3
C)
-55
2
o
C
2.0V
125
2.5
150
4
3
Figure 6. Body Diode Forward Voltage Variation with
0.8
0.6
0.4
0.2
0.0001
1
0.001
1.7
1.5
1.3
1.1
0.9
0.01
0
0.1
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
0
0
Source Current and Temperature.
T
Drain Current and Gate Voltage.
A
V
3.0V
= 25
GS
= 0V
0.2
Gate-to-Source Voltage.
o
2
C
V
V
SD
GS
T
0.5
, BODY DIODE FORWARD VOLTAGE (V)
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
3.5V
I
D
, DRAIN CURRENT (A)
o
C
4
4.0V
T
A
0.6
= 125
25
V
o
GS
C
1
o
= 2.5V
C
4.5V
0.8
6
-55
o
C
6.0V
1
1.5
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8
I
10V
1.2
D
= 0.35A
2
1.4
10