FDG6317NZ Fairchild Semiconductor, FDG6317NZ Datasheet - Page 4

• Manufacturer Part Number: FDG6317NZ
• Description: MOSFET N-CH DUAL 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDG6317NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 66.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDG6317NZ Rev.B1 (W)
Typical Characteristics
0.001
5
4
3
2
1
0
0.01
0.1
10
0
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
I
0.01
D
0.1
= 0.7A
R
0.0001
SINGLE PULSE
1
DS(ON)
R
JA
V
T
0.2
GS
A
= 415
D = 0.5
LIMIT
= 25
= 10V
o
o
V
C
0.2
C/W
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
Q
0.02
g
1
, GATE CHARGE (nC)
0.4
0.01
0.001
V
SINGLE PULSE
DS
DC
= 5V
1s
100m
Figure 11. Transient Thermal Response Curve.
0.6
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
10
10V
1ms
0.01
100 s
0.8
15V
100
1
0.1
t
4
1
, TIME (sec)
100
10
0.0001
75
50
25
8
6
4
2
0
0
0
Figure 8. Capacitance Characteristics.
1
Figure 10. Single Pulse Maximum
C
0.001
rss
V
DS
Power Dissipation.
5
0.01
, DRAIN TO SOURCE VOLTAGE (V)
C
10
oss
t
0.1
1
, TIME (sec)
10
P(pk
Duty Cycle, D = t
T
R
1
J
R
- T
)
JA
JA
(t) = r(t)*R
C
A
= 415°C/W
= P * R
100
iss
t
1
10
t
2
SINGLE PULSE
R
15
JA
T
www.fairchildsemi.com
JA
A
1
= 415°C/W
JA
(t)
= 25°C
/ t
100
2
V
f = 1MHz
GS
= 0 V
1000
1000
20