BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet

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BSD235C L6327

Manufacturer Part Number
BSD235C L6327
Description
MOSFET N/P-CH 20V SOT-363
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSD235C L6327

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 950mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
950mA, 530mA
Vgs(th) (max) @ Id
1.2V @ 1.6µA
Gate Charge (qg) @ Vgs
0.34nC @ 4.5V
Input Capacitance (ciss) @ Vds
47pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSD235C L6327
BSD235C L6327TR
SP000442466
Rev.2.2
1)
Features
· Complementary P + N channel
· Enhancement mode
· Super Logic level (2.5V rated)
· Avalanche rated
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
· Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor
Type
BSD235C
Remark: only one of both transistors active
Package
PG-SOT-363
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327: 3000 pcs / reel
Symbol Conditions
I
I
E
V
P
T
T
D
D,pulse
AS
GS
tot
j
solder
, T
stg
2
T
T
T
P: I
N: I
R
T
JESD22-A114-HBM
page 1
A
A
A
A
GS
=25 °C
=70 °C
=25 °C
=25 °C
D
D
=25 Ω
=-0.53 A,
=0.95 A,
V
R
I
Product Summary
D
6
1
DS
DS(on),max
1)
5
Marking
X9s
V
V
GS
GS
4
3
=±4.5 V
=±2.5 V
-0.53
-0.46
-2.1
1.4
P
Lead Free
Yes
PG-SOT-363
-55 ... 150
0 (<250V)
55/150/56
Value
1
±12
260
0.5
1200
2100
-0.53
-20
2
P
6
3
0.95
0.76
3.8
1.6
N
Packing
Non dry
0.95
5
350
600
BSD235C
20
N
4
Unit
A
mJ
V
W
°C
°C
°C
V
A
2011-07-14

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BSD235C L6327 Summary of contents

Page 1

OptiMOS™ OptiMOS™-P 2 Small Signal Transistor Features · Complementary channel · Enhancement mode · Super Logic level (2.5V rated) · Avalanche rated · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant · Halogen-free ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 2) 2 Performed on 40mm FR4 PCB. The ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate plateau voltage Gate to source charge ...

Page 4

Parameter Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Rev.2.2 Symbol Conditions =25 ° S,pulse =-0. ...

Page 5

Power dissipation (P) =f tot A 0.6 0.5 0.4 0.3 0.2 0 Drain current (P) =f parameter: V ≤-4 0.8 0.6 0.4 0 ...

Page 6

Safe operating area (P) =f =25 ° parameter Max. transient thermal impedance (P) =f(t ) ...

Page 7

Typ. output characteristics (P) =f =25 ° parameter Typ. drain-source on resistance (P) =f =25 °C ...

Page 8

Typ. transfer characteristics (P) =f |> DS(on)max parameter 0.75 0.5 0. Drain-source on-state resistance (P) =f =-0.53 A; ...

Page 9

Forward characteristics of reverse diode (P) =f parameter °C 150 ° 0 Avalanche characteristics (P) =25 Ω =f ...

Page 10

Typ. gate threshold voltage (P) =f =-1.5 µA V GS(th 1.6 1.2 0.8 2% 0.4 0 -60 - Typ. capacitances ( ...

Page 11

Typ. gate charge (P) =f =-0.53 A pulsed V GS gate D parameter 0.1 0 Drain-source breakdown voltage (P) =f =-250 µA V ...

Page 12

Package Outline: Footprint: Reflow soldering: Dimensions in mm Rev.2.2 SOT-363 Packing: page 12 BSD235C 2011-07-14 ...

Page 13

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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