BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 5

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
1 Power dissipation (P)
P
3 Drain current (P)
I
parameter: V
D
tot
=f(T
=f(T
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
A
0
1
0
)
A
0
0
)
GS
≤-4.5 V
40
40
T
T
A
A
80
80
[°C]
[°C]
120
120
160
160
page 5
2 Power dissipation (N)
P
4 Drain current (N)
I
parameter: V
D
tot
=f(T
=f(T
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
A
0
1
0
)
A
0
0
)
GS
≥4.5 V
40
40
T
T
A
A
80
80
[°C]
[°C]
120
120
BSD235C
2011-07-14
160
160