BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 9

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
21 Forward characteristics of reverse diode (P)
I
parameter: T
23 Avalanche characteristics (P)
I
parameter: T
F
AS
=f(V
=f(t
10
10
10
10
10
10
10
SD
AV
-1
-2
-1
-2
1
0
0
10
)
); R
0
0
GS
j
j(start)
=25 Ω
150 °C
0.4
10
25 °C
1
-V
t
AV
125 °C
SD
0.8
[µs]
[V]
100 °C
10
25 °C, 98%
2
1.2
150 °C, 98%
25 °C
10
1.6
page 9
3
22 Forward characteristics of reverse diode (N)
I
parameter: T
24 Avalanche characteristics (N)
I
parameter: T
F
AS
=f(V
=f(t
10
10
10
10
10
10
10
SD
AV
-1
-2
-1
-2
1
0
0
10
)
); R
0
0
GS
j
j(start)
=25 Ω
0.4
10
150 °C
1
t
V
AV
SD
125 °C
0.8
[µs]
100 °C
[V]
25 °C
25 °C
10
25 °C, 98%
2
1.2
150°C,98%
BSD235C
2011-07-14
10
1.6
3