AOD606 Alpha & Omega Semiconductor Inc, AOD606 Datasheet - Page 4

• Manufacturer Part Number: AOD606
• Description: MOSFET N/P-CH COMPL 40V TO252-4
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD606

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 404pF @ 20V
• Power - Max: 20W, 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1118-2

AOD606
Alpha & Omega Semiconductor, Ltd.
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10
10.0
8
6
4
2
0
1.0
0.1
0.01
0.1
0
10
0.00001
0.1
1
R
limited
Figure 9: Maximum Forward Biased Safe
DS(ON)
V
I
D
D=T
T
R
DS
=8A
Figure 7: Gate-Charge Characteristics
J,PK
JC
=20V
2
on
=7.5°C/W
=T
/T
Single Pulse
C
Operating Area (Note F)
+P
T
J(Max)
DM
0.0001
1
.Z
4
=175°C, T
JC
Q
V
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
.R
DS
g
(nC)
JC
(Volts)
6
A
=25°C
1ms
0.001
10ms
10
100 s
DC
10 s
8
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
10
Pulse Width (s)
100
700
600
500
400
300
200
100
200
160
120
80
40
0
0.0001 0.001
0
0.1
0
Figure 10: Single Pulse Power Rating Junction-to-
5
Figure 8: Capacitance Characteristics
C
oss
10
P
C
D
0.01
1
rss
Pulse Width (s)
T
Case (Note F)
15
on
V
C
T
DS
0.1
iss
20
(Volts)
T
T
10
J(Max)
A
=25°C
25
1
=175°C
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30
10
35
100
100
40