AOD606 Alpha & Omega Semiconductor Inc, AOD606 Datasheet - Page 6

• Manufacturer Part Number: AOD606
• Description: MOSFET N/P-CH COMPL 40V TO252-4
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD606

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 404pF @ 20V
• Power - Max: 20W, 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1118-2

AOD606
Alpha & Omega Semiconductor, Ltd.
P-Channel MOSFET Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature of 175° C may be used if the PCB allow s it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1
Rev5: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
SM
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
JA
is the sum of the thermal impedence from junction to case R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Pulsed Body-Diode Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
DSM
is measured with the device mounted on 1in
is based on R
D
is based on T
Parameter
J(MAX)
JA
and the maximum allowed junction temperature of 150° C. The value in any given application depends
J(MAX)
=175° C.
=175° C, using junction-to-case thermal resistance, and is more useful in setting the upper
C
ST
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
J
2008).
D
S
F
F
=25° C unless otherwise noted)
J(MAX)
2
DS
DS
DS
GS
GS
GS
DS
=-1A,V
GS
GS
GS
GS
GEN
=-8A, dI/dt=100A/ s
=-8A, dI/dt=100A/ s
=-10mA, V
FR-4 board with 2oz. Copper, in a still air environment with T
=-32V, V
=0V, V
=V
=-5V, I
=-10V, V
=-10V, I
=-4.5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3
=175° C.
GS
JC
GS
I
D
and case to ambient.
D
GS
DS
DS
=0V
=-250 A
=-8A
D
D
GS
GS
DS
DS
DS
=±20V
=-20V, f=1MHz
=0V, f=1MHz
=-8A
=-4A
=0V
=0V
=-5V
=-20V, I
=-20V, R
D
T
L
=-8A
T
J
=2.5 ,
=125° C
J
=55° C
Min
-1.5
-40
-30
-0.75
14.1
12.2
12.5
23.2
18.2
Typ
-1.8
657
143
62
6.5
2.2
4.1
35
55
16
63
24
7
8
A
=25° C. The SOA
±100
www.aosmd.com
A
Max
-30
-5
50
70
=25° C. The
-1
-3
-1
-8
Units
m
m
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
A
A