AOD606 Alpha & Omega Semiconductor Inc, AOD606 Datasheet - Page 8

• Manufacturer Part Number: AOD606
• Description: MOSFET N/P-CH COMPL 40V TO252-4
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD606

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 404pF @ 20V
• Power - Max: 20W, 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1118-2

AOD606
Alpha & Omega Semiconductor, Ltd.
P-Channel MOSFET Electrical Characteristics (T
100.0
10
10.0
8
6
4
2
0
1.0
0.1
0.01
0.1
0
10
0.00001
0.1
1
R
limited
Figure 9: Maximum Forward Biased Safe
DS(ON)
D=T
T
R
Figure 7: Gate-Charge Characteristics
J,PK
JC
on
=5°C/W
=T
V
I
/T
D
4
Single Pulse
C
DS
=-8A
Operating Area (Note F)
+P
=-20V
T
0.0001
J(Max)
DM
1
.Z
=175°C, T
JC
-Q
-V
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
.R
DS
g
8
(nC)
JC
(Volts)
A
I
=25°C
D
0.001
=-10mA, V
10
DC
12
10 s
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
GS
100 s
1ms
10ms
=0V
0.01
16
Pulse Width (s)
J
100
=25° C unless otherwise noted)
1200
1000
200
160
120
800
600
400
200
80
40
0.0001 0.001
0
0.1
0
Figure 10: Single Pulse Power Rating Junction-to-
0
C
rss
Figure 8: Capacitance Characteristics
5
C
oss
P
D
0.01
1
Pulse Width (s)
10
T
Case (Note F)
on
C
-V
T
iss
DS
0.1
15
(Volts)
T
T
10
J(Max)
A
=25°C
1
20
=175°C
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10
25
100
100
30