FDS6993 Fairchild Semiconductor, FDS6993 Datasheet - Page 2

• Manufacturer Part Number: FDS6993
• Description: MOSFET P-CH DUAL 30/12V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6993

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 30V, 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 6.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohms
• Drain-source Breakdown Voltage: - 30 V, + 12 V
• Gate-source Breakdown Voltage: +/- 25 V, +/- 8 V
• Continuous Drain Current: 4.3 A, - 6.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
I
I
V
R
I
g
C
C
C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
DSS
GSS
D(on)
BV
FS
V
GS(th)
DS(on)
iss
oss
rss
DSS
T
GS(th)
T
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
Q1
V
Q2
V
D
D
V
V
I
I
V
V
V
V
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= –250 A, Referenced to 25 C
= –250 µA, Referenced to 25 C
GS
GS
DS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 µA, Referenced to 25 C
= V
= V
= –10 V, I
= –5 V, I
= –15 V, V
= –6 V, V
= –10 V, I
= –10 V, I
= –4.5 V, I
= –4.5 V, I
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –10 V, V
= –4.5 V, V
= 0 V, I
= 0 V, I
= –24 V, V
= –10 V, V
= ±25 V, V
= ±8 V, V
GS
GS
T
Test Conditions
A
, I
, I
= 25°C unless otherwise noted
D
D
D
D
D
= –250 A
= –250 µA
GS
= –250 A
= –250 A
D
D
D
= –5 A
DS
D
D
D
D
D
GS
DS
DS
GS
GS
= –4.3 A
= –4.3 A, T
= –7 A
DS
= –3.4 A
= –6.8 A
= –6.8 A, T
= –5.9 A
= –5.0
= 0 V, f = 1.0 MHz
= 0 V
= –5 V
= 0 V, f = 1.0 MHz
= –5 V
= 0 V
= 0 V
= 0 V
J
J
= 125 C
= 125 C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–0.4
–20
–20
–30
–12
–1
2980
1230
–1.8
–0.5
–0.9
530
140
790
–21
48
64
74
11
14
14
19
34
70
4
3
9
–1.5
±100
±100
–3
55
80
85
17
24
24
30
–1
–1
FDS6993 Rev C (W)
mV/ C
mV/ C
m
pF
pF
pF
nA
V
A
S
V
A